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<title lang=en>Combined Effects of <formula formulatype="inline"> <tex Notation="TeX">$^{60}$</tex></formula>Co Dose and High Frequency Interferences on a Discrete Bipolar Transistor</title>
<creator>Doridant, A.</creator>
<creator>Raoult, J.</creator>
<creator>Jarrix, S.</creator>
<creator>Blain, A.</creator>
<creator>Hoffmann, P.</creator>
<creator>Chatry, N.</creator>
<creator>Calvel, P.</creator>
<creator>Dusseau, L.</creator>
<contributor>Institut d’Electronique et des Systèmes (IES) ; Université de Montpellier (UM) - Centre National de la Recherche Scientifique (CNRS)</contributor>
<contributor>Ecole Polytechnique Fédérale de Lausanne (EPFL)</contributor>
<contributor>TRAD [Labège] ; TRAD</contributor>
<contributor>Institut de recherche, santé, environnement et travail [Rennes] (Irset) ; Université d'Angers (UA) - Université des Antilles et de la Guyane (UAG) - Université de Rennes 1 (UR1) - École des Hautes Études en Santé Publique [EHESP] (EHESP) - Institut National de la Santé et de la Recherche Médicale (INSERM) - Structure Fédérative de Recherche en Biologie et Santé de Rennes ( Biosit : Biologie - Santé - Innovation Technologique )</contributor>
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<source>ISSN: 0018-9499</source>
<source>IEEE Transactions on Nuclear Science</source>
<publisher>Institute of Electrical and Electronics Engineers</publisher>
<identifier>hal-01633501</identifier>
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<source>IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (6), pp.3004 - 3010. 〈10.1109/TNS.2012.2227276〉</source>
<identifier>DOI : 10.1109/TNS.2012.2227276</identifier>
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<subject>[SPI.TRON] Engineering Sciences [physics]/Electronics</subject>
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<date>2012-12</date>
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