Éditeur(s) : HAL CCSD Wiley
Résumé : We report new measurements of the surface ionization Phi(0) for Ge K alpha and L alpha X-rays on an Fe substrate, Ga K alpha and L alpha X-rays on an Ni substrate, and Au M alpha X-rays on Si, W and Ta substrates. The measurements were performed using the tracer technique for electron incident energies ranging from the ionization threshold up to about 40 keV. Improvements in sample preparation and in the X-ray measurement technique enabled surface ionization values to be obtained with uncertainties less than 2%. Simulations of Phi(0) for the studied cases were performed using the general-purpose Monte Carlo (MC) code PENELOPE. Experimental measurements are compared with simulation results and with the results of several predictive formulae widely used in electron probe microanalysis and Auger electron spectroscopy (AES). The accuracy of the reported measurements makes it possible to assess the reliability of the different calculations for incident electron energies below 10 keV.
ISSN: 0049-8246

hal-00617775
https://hal.archives-ouvertes.fr/hal-00617775
DOI : 10.1002/xrs.1294

Éditeur(s) : HAL CCSD Institute of Electrical and Electronics Engineers (IEEE) Institute of Electrical and Electronics Engineers
Résumé : International audience
Conventional quantitative electron probe microanalysis of actinides requires the use of reference standard samples. However, for such elements, standards are generally not available. To overcome this difficulty, standardless methods of analysis are used, in which the x-ray intensity emitted by the standard is calculated. To be reliable, such calculations require accurate knowledge of physical data such as the x-ray production cross section. However, experimental data of this quantity are not always available for actinide elements. In the present work, experimental L and M x-ray production cross sections were measured for elements uranium and lead. Measurements were performed with two electron microprobes using wavelength-dispersive spectrometers using thin self-supporting targets. Experimental results are compared with calculated cross sections obtained from different analytical formulae, and, whenever possible, with experimental data obtained from the literature.
ISSN: 0018-9499

hal-01122820
https://hal.archives-ouvertes.fr/hal-01122820
DOI : 10.1109/TNS.2014.2321016

Éditeur(s) : HAL CCSD Cambridge University Press (CUP)
Résumé : International audience
XFILM is a computer program for determining the thickness and composition of thin films on Substrates and multilayers by electron probe microanalysis. In this study, we describe the X-ray emission model implemented in the latest version of XFILM and assess its reliability by comparing measured and calculated k-ratios from thin-film samples available in the literature. We present and discuss examples of applications of XFILM that illustrate the capabilities of the program.
ISSN: 1431-9276

hal-00475542
https://hal.archives-ouvertes.fr/hal-00475542
DOI : 10.1017/S1431927609991218

Éditeur(s) : HAL CCSD IOP Publishing
Résumé : The use of electron probe microanalysis (EPMA) at low voltage allows improvements in the lateral resolution and surface sensitivity of the technique down to the sub-micrometre scale, and it is also useful in minimizing X-ray absorption (for the analysis of ultra-light elements), charging effects and secondary fluorescence. However, EPMA at low voltage is accompanied by a number of problems which may affect the accuracy of quantitative results. A large number of these problems arise from the need of using low-energy X-ray lines such as L- and M-lines, which have low fluorescence yields, large uncertainties in the mass attenuation coefficients, and are affected by several spectroscopic difficulties (e.g., peak shifts and overlaps). Other factors that play an important role at low voltage are carbon contamination, surface oxidation, the quality of sample polishing, the influence of a conductive coating and the limitations of matrix correction procedures. In this paper, we illustrate the capabilities of EPMA at low voltage and we examine in detail the different sources of uncertainty that may affect the accuracy of quantitative results.
ISSN: 1757-8981

hal-00767564
https://hal.archives-ouvertes.fr/hal-00767564
DOI : 10.1088/1757-899X/32/1/012016

Éditeur(s) : HAL CCSD Elsevier
Résumé : International audience
The oxygen fugacity and therefore the iron redox state of a melt is known to have a strong influence on the liquid line of descent of magmas and thus on the composition of the coexisting melts and crystals. We present a new method to estimate this critical parameter from electron probe microanalyses of two of the most common minerals of basaltic series, plagioclase and clinopyroxene. This method is not based on stoichiometric calculations, but on the different partitioning behaviour of Fe3+ and Fe2+ between both minerals and a melt phase: plagioclase can incorporate more Fe3+ than Fe2+, while clinopyroxene can incorporate more Fe2+ than Fe3+. For example, the effect of oxidizing a partly molten basaltic system (Fe3+ is stabilized with respect to Fe2+) results in an increase of FeOtotal in plagioclase, but a decrease in the associated clinopyroxene. We propose an equation, based on published partition coefficients, that allows estimating the redox state of a melt from these considerations. An application to a set of experimental and natural data attests the validity of the proposed model. The associated error can be calculated and is on average <1 log unit of the prevailing oxygen fugacity.;In order to reduce the number of different variables influencing the Fe2+/Fe3+ mineral/melt equilibrium, our model is restricted to basaltic series with SiO2<60% that have crystallized at intermediate to low pressure (<0.5 GPa) and under relatively oxidizing conditions (Delta FMQ>0; where FMQ is the fayalite-magnetite-quartz oxygen buffer equilibrium), but it may be parameterized for other conditions. A spreadsheet is provided to assist the use of equations, and to perform the error propagation analysis.
ISSN: 0377-0273

hal-00475550
https://hal.archives-ouvertes.fr/hal-00475550
DOI : 10.1016/j.jvolgeores.2009.11.023